SQJ412EP
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
70
56
42
28
V GS = 10 V thru 4 V
70
56
42
28
T C = 25 °C
14
V GS = 3 V
14
T C = 125 °C
0
0
T C = - 55 °C
0
2 4 6 8
10
0
1 2 3 4
5
200
160
120
80
V D S - Drain-to- S ource Voltage (V)
Output Characteristics
T C = - 55 ° C
T C = 25 ° C
0.015
0.012
0.009
0.006
V GS - G ate-to- S ource Voltage (V)
Transfer Characteristics
V GS = 4.5 V
T C = 125 ° C
40
0
0.003
0.000
V GS = 10 V
0
12
24 36
48
60
0
14
28 42
56
70
7000
6000
5000
C i ss
I D - Drain Current (A)
Transconductance
10
8
I D - Drain Current (A)
On-Resistance vs. Drain Current
l D = 10 A
4000
3000
2000
1000
C o ss
6
4
2
V D S = 20 V
0
C r ss
0
0
10
20
30
40
0
10
20
30 40 50 60 70
80
90
V D S - Drain-to- S ource Voltage (V)
Capacitance
Q g - Total G ate Charge (nC)
Gate Charge
S12-1860-Rev. C, 13-Aug-12
3
Document Number: 65935
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQJ461EP-T1-GE3 MOSFET P-CH D-S 60V TO252
SQJ469EP-T1-GE3 MOSFET P-CH 80V 32A PPAK 8SOIC
SQJ844EP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SQJ941EP-T1-GE3 MOSFET DUAL P-CH 30V PPAK 8SOIC
SQJ964EP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SQJ970EP-T1-GE3 MOSFET DUAL N-CH 40V PPAK 8SOIC
SQM110N04-02L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N04-03L-GE3 MOSFET N-CH D-S 40V TO263
相关代理商/技术参数
SQJ422EP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 75A 8-SO 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 75A PPAKSO
SQJ431EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 200 V (D-S) 175 ?°C MOSFET
SQJ431EP-T1-GE3 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:
SQJ443EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 40 V (D-S) 175 ?°C MOSFET
SQJ456EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 100 V (D-S) 175 ?°C MOSFET
SQJ456EP-T1-GE3 功能描述:MOSFET 100V 32A 83W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ460EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQJ460EP-T1-GE3 功能描述:MOSFET 60V 32A 83W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube